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d a t a sh eet product speci?cation file under integrated circuits, ic06 december 1990 integrated circuits 74hc/hct4016 quad bilateral switches for a complete data sheet, please also download: the ic06 74hc/hct/hcu/hcmos logic family specifications the ic06 74hc/hct/hcu/hcmos logic package information the ic06 74hc/hct/hcu/hcmos logic package outlines
december 1990 2 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 features low on resistance: 160 w (typ.) at v cc = 4.5 v 120 w (typ.) at v cc = 6.0 v 80 w (typ.) at v cc = 9.0 v individual switch controls typical break before make built in output capability: non-standard i cc category: ssi general description the 74hc/hct4016 are high-speed si-gate cmos devices and are pin compatible with the 4016 of the 4000b series. they are specified in compliance with jedec standard no. 7a. the 74hc/hct4016 have four independent analog switches (transmission gates). each switch has two input/output terminals (y n ,z n ) and an active high enable input (e n ). when e n is connected to v cc , a low bidirectional path between y n and z n is established (on condition). when e n is connected to ground (gnd), the switch is disabled and a high impedance between y n and z n is established (off condition). current through a switch will not cause additional v cc current provided the voltage at the terminals of the switch is maintained within the supply voltage range; v cc >> (v y ,v z ) >> gnd. inputs y n and z n are electrically equivalent terminals. quick reference data gnd = 0 v; t amb = 25 c; t r = t f = 6 ns notes 1. c pd is used to determine the dynamic power dissipation (p d in m w): p d = c pd v cc 2 f i +? {(c l + c s ) v cc 2 f o } where: f i = input frequency in mhz f o = output frequency in mhz ? {(c l + c s ) v cc 2 f o } = sum of outputs c l = output load capacitance in pf c s = max. switch capacitance in pf v cc = supply voltage in v 2. for hc the condition is v i = gnd to v cc for hct the condition is v i = gnd to v cc - 1.5 v ordering information see 74hc/hct/hcu/hcmos logic package information . symbol parameter conditions typical unit hc hct t pzh / t pzl turn on time e n to v os c l = 15 pf; r l =1 k w ; v cc = 5 v 16 17 ns t phz / t plz turn off time e n to v os 14 20 ns c i input capacitance 3.5 3.5 pf c pd power dissipation capacitance per switch notes 1 and 2 12 12 pf c s max. switch capacitance 5 5 pf
december 1990 3 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 pin description pin no. symbol name and function 1, 4, 8, 11 y 0 to y 3 independent inputs/outputs 7 gnd ground (0 v) 2, 3, 9, 10 z 0 to z 3 independent inputs/outputs 13, 5, 6, 12 e 0 to e 3 enable inputs (active high) 14 v cc positive supply voltage fig.1 pin configuration. fig.2 logic symbol. fig.3 iec logic symbol. (a) (b)
december 1990 4 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 function table notes 1. h = high voltage level l = low voltage level input e n channel impedance l h high low fig.4 functional diagram. applications signal gating modulation demodulation chopper fig.5 schematic diagram (one switch).
december 1990 5 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 ratings limiting values in accordance with the absolute maximum system (iec 134) voltages are referenced to gnd (ground = 0 v) recommended operating conditions symbol parameter min. max. unit conditions v cc dc supply voltage - 0.5 + 11.0 v i ik dc digital input diode current 20 ma for v i <- 0.5 v or v i > v cc + 0.5 v i sk dc switch diode current 20 ma for v s <- 0.5 v or v s > v cc + 0.5 v i s dc switch current 25 ma for - 0.5 v < v s < v cc + 0.5 v i cc ; i gnd dc v cc or gnd current 50 ma t stg storage temperature range - 65 + 150 c p tot power dissipation per package for temperature range: - 40 to + 125 c 74hc/hct plastic dil 750 mw above + 70 c: derate linearly with 12 mw/k plastic mini-pack (so) 500 mw above + 70 c: derate linearly with 8 mw/k p s power dissipation per switch 100 mw symbol parameter 74hc 74hct unit conditions min. typ. max. min. typ. max. v cc dc supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 v v i dc input voltage range gnd v cc gnd v cc v v s dc switch voltage range gnd v cc gnd v cc v t amb operating ambient temperature range - 40 + 85 - 40 + 85 c see dc and ac characteris- tics t amb operating ambient temperature range - 40 + 125 - 40 + 125 c 1000 v cc = 2.0 v t r ,t f input rise and fall times 6.0 500 400 250 6.0 500 ns v cc = 4.5 v v cc = 6.0 v v cc = 10.0 v
december 1990 6 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 dc characteristics for 74hc/hct for 74hc: v cc = 2.0, 4.5, 6.0 and 9.0 v for 74hct: v cc = 4.5 v notes to the dc characteristics 1. at supply voltages approaching 2.0 v the analog switch on-resistance becomes extremely non-linear. therefore it is recommended that these devices be used to transmit digital signals only, when using these supply voltages. 2. for test circuit measuring r on see fig.6. symbol parameter t amb ( c) unit test conditions 74hc/hct v cc (v) i s ( m a) v is v i + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. r on on resistance (peak) - 160 120 85 - 320 240 170 - 400 300 213 - 480 360 255 w w w w 2.0 4.5 6.0 9.0 100 1000 1000 1000 v cc to gnd v ih or v il r on on resistance (rail) 160 80 70 60 - 160 140 120 - 200 175 150 - 240 210 180 w w w w 2.0 4.5 6.0 9.0 100 1000 1000 1000 gnd v ih or v il r on on resistance (rail) 170 90 80 65 - 180 160 135 - 225 200 170 - 270 240 205 w w w w 2.0 4.5 6.0 9.0 100 1000 1000 1000 v cc v ih or v il d r on maximum d on resistance between any two channels - 16 12 9 w w w w 2.0 4.5 6.0 9.0 v cc to gnd v ih or v il fig.6 test circuit for measuring r on . fig.7 test circuit for measuring off-state current.
december 1990 7 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 fig.8 test circuit for measuring on-state current. fig.9 typical r on as a function of input voltage v is for v is = 0 to v cc .
december 1990 8 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 dc characteristics for 74hc voltages are referenced to gnd (ground = 0 v) ac characteristics for 74hc gnd = 0 v; t r =t f = 6 ns; c l = 50 pf symbol parameter t amb ( c) unit test conditions 74hc v cc (v) v i other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. v ih high level input voltage 1.5 3.15 4.2 6.3 1.2 2.4 3.2 4.3 1.5 3.15 4.2 6.3 1.5 3.15 4.2 6.3 v 2.0 4.5 6.0 9.0 v il low level input voltage 0.8 2.1 2.8 4.3 0.50 1.35 1.80 2.70 0.50 1.35 1.80 2.70 0.50 1.35 1.80 2.70 v 2.0 4.5 6.0 9.0 i i input leakage current 0.1 0.2 1.0 2.0 1.0 2.0 m a 6.0 10.0 v cc or gnd i s analog switch off-state current per channel 0.1 1.0 1.0 m a 10.0 v ih or v il v s ? = v cc - gnd (see fig.7) i s analog switch on-state current 0.1 1.0 1.0 m a 10.0 v ih or v il v s ? = v cc - gnd (see fig.8) i cc quiescent supply current 2.0 4.0 20.0 40.0 40.0 80.0 m a 6.0 10.0 v cc or gnd v is = gnd or v cc ;v os = v cc or gnd symbol parameter t amb ( c) unit test conditions 74hc v cc (v) other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. t phl / t plh propagation delay v is to v os 17 6 5 4 60 12 10 8 75 15 13 10 90 18 15 12 ns 2.0 4.5 6.0 9.0 r l = ;c l = 50 pf (see fig.16) t pzh / t pzl turn on time e n to v os 52 19 15 11 190 38 32 28 240 48 41 35 235 57 48 42 ns 2.0 4.5 6.0 9.0 r l =1 k w ;c l = 50 pf (see figs 17 and 18) t phz / t plz turn off time e n to v os 47 17 14 13 145 29 25 22 180 36 31 28 220 44 38 33 ns 2.0 4.5 6.0 9.0 r l =1 k w ;c l = 50 pf (see figs 17 and 18)
december 1990 9 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 dc characteristics for 74hct voltages are referenced to gnd (ground = 0 v) note 1. the value of additional quiescent supply current ( d i cc ) for a unit load of 1 is given here. to determine d i cc per input, multiply this value by the unit load coefficient shown in the table below. symbol parameter t amb ( c) unit test conditions 74hct v cc (v) v i other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. v ih high level input voltage 2.0 1.6 2.0 2.0 v 4.5 to 5.5 v il low level input voltage 1.2 0.8 0.8 0.8 v 4.5 to 5.5 i i input leakage current 0.1 1.0 1.0 m a 5.5 v cc or gnd i s analog switch off-state current per channel 0.1 1.0 1.0 m a 5.5 v ih or v il v s ? = v cc - gnd (see fig.7) i s analog switch on-state current 0.1 1.0 1.0 m a 5.5 v ih or v il v s ? = v cc - gnd (see fig.8) i cc quiescent supply current 2.0 20.0 40.0 m a 4.5 to 5.5 v cc or gnd v is = gnd or v cc ;v os = v cc or gnd d i cc additional quiescent supply current per input pin for unit load coef?cient is 1 (note 1) 100 360 450 490 m a 4.5 to 5.5 v cc - 2.1v other inputs at v cc or gnd input unit load coefficient e n 1.00
december 1990 10 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 ac characteristics for 74hct gnd = 0 v; t r =t f = 6 ns; c l = 50 pf additional ac characteristics for 74hc/hct recommended conditions and typical values gnd = 0 v; t r =t f = 6 ns notes 1. v is is the input voltage at a y n or z n terminal, whichever is assigned as an input. 2. v os is the output voltage at a y n or z n terminal, whichever is assigned as an output. 3. adjust input voltage v is to 0 dbm level (0 dbm = 1 mw into 600 w ). 4. adjust input voltage v is to 0 dbm level at v os for 1 mhz (0 dbm = 1 mw into 50 w ). symbol parameter t amb ( c) unit test conditions 74hct v cc (v) other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. t phl / t plh propagation delay v is to v os 6 12 15 18 ns 4.5 r l = ;c l = 50 pf (see fig.16) t pzh turn on time e n to v os 19 35 44 53 ns 4.5 r l =1 k w ;c l = 50 pf (see figs 17 and 18) t pzl turn on time e n to v os 20 35 44 53 ns 4.5 r l =1 k w ;c l = 50 pf (see figs 17 and 18) t phz / t plz turn off time e n to v os 23 35 44 53 ns 4.5 r l =1 k w ;c l = 50 pf (see figs 17 and 18) symbol parameter typ. unit v cc (v) v is(p-p) (v) conditions sine-wave distortion f = 1 khz 0.80 0.40 % % 4.5 9.0 4.0 8.0 r l = 10 k w ;c l = 50 pf (see fig.14) sine-wave distortion f = 10 khz 2.40 1.20 % % 4.5 9.0 4.0 8.0 r l = 10 k w ;c l = 50 pf (see fig.14) switch off signal feed-through - 50 - 50 db db 4.5 9.0 note 3 r l = 600 w ;c l = 50 pf; f = 1 mhz (see figs 10 and 15) crosstalk between any two switches - 60 - 60 db db 4.5 9.0 note 3 r l = 600 w ;c l = 50 pf; f = 1 mhz (see fig.12) v (p-p) crosstalk voltage between enable or address input to any switch (peak-to-peak value) 110 220 mv mv 4.5 9.0 r l = 600 w ;c l = 50 pf; f = 1 mhz (e n , square wave between v cc and gnd, t r =t f = 6 ns) (see fig.13) f max minimum frequency response ( - 3db) 150 160 mhz mhz 4.5 9.0 note 4 r l =50 w ;c l = 10 pf (see figs 11 and 14) c s maximum switch capacitance 5 pf
december 1990 11 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 fig.10 typical switch off signal feed-through as a function of frequency. test conditions: v cc = 4.5 v; gnd = 0 v; r l =50 w ;r source =1 k w . fig.11 typical frequency response. test conditions: v cc = 4.5 v; gnd = 0 v; r l =50 w ;r source =1 k w .
december 1990 12 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 fig.12 test circuit for measuring crosstalk between any two switches. (a) channel on condition; (b) channel off condition. fig.13 test circuit for measuring crosstalk between control and any switch. the crosstalk is defined as follows (oscilloscope output): fig.14 test circuit for measuring sine-wave distortion and minimum frequency response. fig.15 test circuit for measuring switch off signal feed-through.
december 1990 13 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 ac waveforms fig.16 waveforms showing the input (v is ) to output (v os ) propagation delays. (1) hc : v m = 50%; v i = gnd to v cc . hct: v m = 1.3 v; v i = gnd to 3 v. fig.17 waveforms showing the turn-on and turn-off times. (1) hc : v m = 50%; v i = gnd to v cc . hct: v m = 1.3 v; v i = gnd to 3 v.
december 1990 14 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4016 test circuit and waveforms package outlines see 74hc/hct/hcu/hcmos logic package outlines . fig.18 test circuit for measuring ac performance. conditions test switch v is t pzh t pzl t phz t plz others gnd v cc gnd v cc open v cc gnd v cc gnd pulse c l = load capacitance including jig and probe capacitance (see ac characteristics for values). r t = termination resistance should be equal to the output impedance z o of the pulse generator. t r =t f = 6 ns; when measuring f max , there is no constraint t r ,t f with 50% duty factor. family amplitude v m t r ;t f f max ; pulse width other 74hc 74hct v cc 3.0 v 50% 1.3 v < 2 ns < 2 ns 6 ns 6 ns fig.19 input pulse definitions. family amplitude v m t r ;t f f max ; pulse width other 74hc 74hct v cc 3.0 v 50% 1.3 v < 2 ns < 2 ns 6 ns 6 ns c l = load capacitance including jig and probe capacitance (see ac characteristics for values). r t = termination resistance should be equal to the output impedance z o of the pulse generator. t r =t f = 6 ns; when measuring f max , there is no constraint t r ,t f with 50% duty factor.

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